• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method for driving a field effect transistor for shaping an electrical signal, representing a sound, to an output signal is disclosed. The method comprises modifying the input signal to an intermediate signal, and output of the intermediate signal to the field effect transistor for shaping the output signal. The method comprises the steps of adjusting the quiescent point of the field effect transistor such that the same is placed in the quadratic region of the transfer characteristics of the field effect transistors, and adjusting the amplitude of the intermediate signal, such that the same causes the potential swing between the gate terminal and the source terminal to at least partly be in the quadratic region of the transfer characteristics of the field effect transistor.
    公开号:SE1051380A1
    申请号:SE1051380
    申请日:2010-12-28
    公开日:2012-06-29
    发明作者:Sven-Aake Eriksson
    申请人:Res Electronics Leksand Ab；
    IPC主号:
    专利说明:

    15 20 25 30 35 Therefore, it is desirable to use modern semiconductor components to mimic the sound formation of the radio tube. This has been done in several previous experiments which can be divided into two main groups of amplifiers.
    The first group of amplifiers uses common discrete components that utilize some nonlinearity effect on semiconductors. As an example of this, GB 2274367A (Metal Oxide Semiconductor) can also be mentioned. US4405832A also describes a sound-forming step which aims to imitate the one which uses high-voltage MOSFET Field Effect Transistor) transistors. distorted the sound of a tube amplifier by means of operational amplifiers and diodes.
    The first group also includes amplifiers published on the Internet in discussion forums for guitar enthusiasts. Among these is the so-called "Fetzer Valve" (see http://www.runoffgroove.com/fetzervalve.com). This amplifier is equipped with a copy of an input stage on a Fender tube amplifier, where the radio tube has been replaced with a JFET transistor. The idea behind this amplifier is to realize that a JFET (Junction Field Effect Transistor) and a radio tube exhibit similar nonlinearities. However, there are several disadvantages with the "Fetzer Valve" design, the most serious of which from a production perspective is that the amplifier must be manually tuned with potentiometers to obtain the desired properties. Another disadvantage is that the potential of the gate terminal is adjusted by means of an auto-bias design. The autobias cause the design to be sensitive to intrinsic variations of the field effect transistor.
    Another amplifier is the "Tillman" preamplifier published in the Usenet group alt.guitar on September 28, 1992. The "Tillman" amplifier also uses a JFET transistor and an auto-bias of the gate terminal's potential.
    N U 20 25 30 35 The second group of amplifiers uses digital signal processing to mimic the rudder sound. The digital signal processing takes place by digitizing the incoming signal from the guitar's microphones, the digital signal is then fed to a digital signal processor, which processes the digital signal according to a program. The program is written to emulate the nonlinearities of the rudder amplifier.
    As an example of this, patent US5789689 can be cited.
    BRIEF DESCRIPTION The object of the invention is to provide a shaping of an electrical signal representing a sound, which shaping aims to emphasize the non-linear sound reproduction which the human ear experiences as pleasant.
    The object set out is achieved in the first aspect of the invention in that a method of the kind indicated in the introduction comprises the special measures for driving a field effect transistor, which measures are: - setting the operating point of the field effect transistor so that it ends up in the square area of the field effect transistor transfer characteristics by adjusting the potential between the gate terminal and the source terminal of the field effect transistor by the DC voltage level of the intermediate signal and the electrical potential of the field terminal of the field effect transistor, adjusting the amplitude of the intermediate signal so that it brings the potential oscillation between the gate terminal and the source the terminal to be at least in part in the square region of the transfer characteristic of the field effect transistor.
    By choosing the operating point to be in the square region of the transmission characteristic of the field effect transistor, the part of the transmission characteristic which most mimics the transmission characteristic of a radio tube will be utilized, whereby a suitable sound formation is obtained.
    When a signal is superimposed on the intermediate signal, the electrical potential between the gate terminal and the source terminal of the field effect transistor will vary. By ensuring that this amplitude acts at least in part in the square region of the field effect transistor, it is ensured that a tubular sound is always obtained. contain the distortion given by the working of the transistor- This tubular sound is characterized by that point year in the square region.
    According to a preferred embodiment of the method, the amplitude of the intermediate signal is adjusted to fall below the threshold voltage of the field effect transistor.
    By falling below the threshold voltage of the field power transistor, the field power transistor will be throttled, whereby the output signal cuts hard. This hard cut is perceived by the listener as the characteristic distorted sound of a tube amplifier being overridden.
    According to a further preferred embodiment of the invented method, the method comprises the steps of: limiting the minimum electrical potential between the drain terminal and the source terminal of the field effect transistor by means of at least one impedance arranged at the at least the drain terminal of the same, which impedance causes the maximum current that the field effect transistor can drive in the current circuit does not cause the transistor to bottom out, - arranging a resistance in series between the output of the modifier and the gate terminal of the field effect transistor, - adjusting the amplitude of the intermediate signal so that it brings the potential between gate terminals and the source terminal NU 20 25 30 35 to a value which at least corresponds to the maximum possible drain current in the coupling.
    Through these process steps, the technical effect of soft cutting, tube-like sound is achieved. which is a desirable feature of a In the case where the method comprises the step of: - arranging a diode between the gate terminal of the field effect transistor and an electric potential, the technical effect of soft cutting is achieved with the possibility to control the level where the soft cutting begins.
    The second aspect of the invention is achieved in that a device for carrying out the method comprises the special features described in subordinate device requirements.
    BRIEF DESCRIPTION OF THE DRAWINGS The invention is explained in more detail by the following detailed description of embodiments of the invention with reference to the accompanying figures: Fig. 1 shows a block diagram of a basic sound reproduction system comprising sound former stages for pure tubular sound and tubular distortion. sound.
    Fig. 2 shows the transmission characteristics of a typical field-effect transistor of depletion type.
    Fig. 3 schematically shows a sound forming step for pure tubular sound.
    Fig. 4 illustrates in a diagram what a soft and hard distorted sine signal looks like in the time domain.
    N U 20 25 30 35 - Fig. 5 schematically shows a sound forming stage for hard or softly distorted tubular sound.
    Fig. 6 shows an alternative embodiment with a MOSFET transistor.
    Fig. 7 shows an alternative embodiment with a JFET transistor and a diode arranged at its gate terminal.
    Fig. 8 shows an embodiment of a modifier for reinforcement and dc level adjustment.
    DETAILED DESCRIPTION It should be understood that the drawing figures are schematic and only suitable for illustrating the inventive idea as it appears from the written description and from the appended claims.
    The invention should therefore not be considered limited to the schematic figures shown.
    Figure 1 initially shows a music system for reproducing sound from, for example, an electric guitar (1). The audio signals are picked up by a microphone (2), the weak signals of which form the input signal (3) to the amplifier (200). In the amplifier (200), the weak input signal (3) is amplified by a sound former pure sound-like sound generator (4) which is fed to a sound-forming stage (5), the pure sound-like sound former to a sound-forming input signal (100). (4) most advantageously exhibits non-linearities similar to the non-linearities of the radio tube. (100) by means of a modifying means (7). aimed at obtaining (8), output to one (10) is first modified sound-forming (6), The actual sound- In the sound-forming step signal (5) this modified input signal is called the intermediate signal the formation of the intermediate signal (7) soft and hard distortion occurs in the sound formation step is formed. The output signal (9) (10) for generating sound. wherein the output signal (9) power amplifier which in turn drives the loudspeaker 10 15 20 25 30 35 Figure 2 shows the transmission characteristic of a JFET Field Effect Transistor (J1), (ID) between the gate of the field effect transistor (Junction of depletion type which transmission characteristic shows the drain current as a function of (VGS) and source-terminal (S) the potential difference terminal (G) difference source-terminal (S). (12) approaches the horizontal axis of a given potential (VDS) between the drain of the transistor (J1) -terminal (D) and Based on this diagram, (ID) is then asymptotically defined This voltage (12) is- (VGS) between which the drain current (VGS) is drawn choke voltage.Then the potential difference the voltage gate-terminal (G) and source-terminal (S) is 0 volts is defined (13). (VGS) eventually leads to the intrinsic diode in the transistor (J1) (S) reaching its faith saturation current An increasing potential between the gate terminal (G) and the source terminal ( 14), begins to conduct current with an exponential pray depending on the voltage at which the intrinsic gate-source diode has the potential.
    By studying the transmission characteristics of a JFET, it is realized that it is largely similar to the transmission characteristics of a radio tube. Especially in the square region, the JFET transistor exhibits a transmission characteristic that is almost identical to the transmission characteristic of the radio tube. The square area is defined as the interval between throttle (12) (16). (16) the voltage when the transmission characteristic deviates from an (15) adjustment of the operating point and a voltage The voltage can be seen as a linear adaptation of the same in the linear range. Thus, by (Q) of a JFET being in (12), the nonlinearities of the JFET tran interval defined between the throttle voltage (16) system will largely correspond to the non- and voltage linearities exhibited by a radio tube.
    Figure 3 shows the sound former according to the invention for pure roaring sound (4). is fed to a bias stage The input signal (3) from the microphone (2) (17), the DC level of the lens and forms an intermediate signal which adjusts the incoming (3) (18) (J2). signal for supply to (J2) a gate terminal of a JFET transistor The transistor 10 15 20 25 30 35 is supplied with a supply voltage (20). connected to ground potential via an impedance (VDD2) via an impedance (ZD2) Source terminal (19) year (ZS2). to its drain terminal The operating point of the JFET transistor (J2) is in the square region (QR), which is defined as the interval from the choke voltage (12) to the voltage (16), see Figure 2. This operating point is obtained by providing the gate terminal (18) of the transistor (J2) with a relatively electric potential of the source (19). Most advantageous is the electrical potential when about 20% (J2) of the transistor operating point (Q) of the maximum drain current for This drain current leads to always being in the square transistor is obtained. the area.
    A known problem with the adjustment of the operating point of a JFET transistor is that its properties spread very much between different individuals of the same transistor type. (13) typical small signal JFET transistor between 2 to 7 mA. Such, for example, scattering the matting current in Figure 2 for a large spread usually meant that the operating point of the transistors became laborious to adjust in a production advantageous manner, usually it meant that the operating point of the JFET transistors had to be tuned manually.
    In the sound former for pure tube-like sound (4) according to the invention, another method is used to adjust the operating point of the trans- (J2). By studying in the data sheet of the JFET transistor the scattering in measuring current (13) transistors, the scattering in electrical potential of that system for a class of selected operating point for different transistors can be estimated.
    The estimation is made by laterally moving the graph in the transfer characteristic to the different levels for matting (13), can be read. the current whereby the VGS potential for the selected working point The resulting variation in the potential for the working point is called AVGS. The average value of the different VGS potentials is called VGSmHæl, this average value corresponds to the average potential needed to achieve the desired operating point at about 20% of maximum drain current.
    By solving the node equations of the JFET transistor (J2), the spread in the drain current can be written as: _ID-AVGS 2-VS Inspection of the expression for the variation in drain current, AID, gives that the electrical potential at the source terminal, VS, affects the drain current variation, AID. A sufficiently large potential VS thus results in the drain current variation due to differences in saturation current of the JFET transistor (J2) becoming negligible.
    (ZS2) on the source terminal is determined, VS, calculation of ZS2 = VS / ID.
    The impedance is dimensioned by using a suitable potential this potential is used for The impedance (ZD2) is dimensioned by ensuring that the drain terminal has a potential corresponding to half the available DC level, which can be written as: VDD2 + VS 2 VD (ZD2) and the transistor arranged between the supply voltage (J2) Whereby the impedance (VDD2) is calculated as: drain terminal can easily ZD2: VDD2-VD Such a dimensioning gives maximum dynamics for the output signal (5) with respect to the available supply voltage. (17) applying a dc level to the input signal (3) The bias stage is most advantageously dimensioned so that as the year VS-VGSMÉQU whereby the JFET transistor obtains its desired operating point.
    Through this dimensioning, an adjustment of the operating point is obtained which is insignificant for variations in the mating (13) of the JFET transistor (J2). this dimensioning that the operating point of the transistor Furthermore, the current (J2) current is always in the square region, whereby a sound pleasant to the human ear is obtained.
    Figure 4 shows some of the most important sound-forming properties that a tube-like sound-former must exhibit, in addition to the previous ones. First, the so-called (21) is illustrated, which is smaller than the maximum discussed non-linearities. hard distortion by an incoming sine wave (AH) (22). A hard cut is generally obtained by cutting off at a signal level the amplitude (A) of the waveform whereby hard distortion is obtained. amplifier stage is overridden with too high an amplitude of its input signal.
    One of the most important properties of a moving sound former is the so-called soft distortion of an input signal. Figure 4 shows a typically softly distorted waveform (23) formed from an incoming sinusoidal waveform (21). (100) (5). from the sound former for pure tube-like figure 5 shows an inventive step according to the invention for soft and hard distortion of an incoming input signal. the intermediate signal (7) is formed. The intermediate signal (7) is output to the sound-forming step (8) according to the invention for forming the sound.
    The sound forming step (8) comprises an impedance (ZG3) arranged between the intermediate signal (7) and the gate terminal (24) of the JFET transistor (J3). The sound forming stage (8) is supplied with a supply voltage (VDD3), which supply voltage is connected to the trans- (ZD3). is further connected to the output signal of the sound former (25) Description and method for voltage sistor drain-terminal Drain- (26) terminal (9). (26) via an impedance terminals Source terminals (ZS3). dimensioning of the components included in the sound former (8) to earth potential via the impedance is shown in detail below.
    (J3) only the sound former is in the square region of the inventive (QR) guidance characteristic. Most advantageously, the drain current in which the operating point (Q) of the JFET transistor of the over-operating point is about 20% of the maximum drain current, results in the operating point being in the square region (QR) - procedure previously described in connection with Figure 3.
    The impedance (ZD3, ZS3) is dimensioned by adjusting the working point (Q) by the same pre- In the same way as described in connection with Figure 3.
    An amplitude of one half period of the intermediate signal (7) which is large enough to be below the throttle voltage (12) of the JFET transistor (J3) causes throttling of the channel in the JFET transistor (J3) whereby the drain current (ID3) through it reaches its minimum value, in practice zero. By throttling the transistor (J3), the electrical potential of the output signal (9) is brought to its maximum value, whereby the output signal (9) cuts (22). Such a cut (22) of the output signal (9) is usually called a hard cut.
    An amplitude of the second half period of the intermediate signal (7) which is large enough to bring the potential between the gate (25) (26) exceeds the built-in potential of the intrinsic gate (J3), which causes the gate-source diode to start conducting current.
    (J3) the current will increase exponentially according to the diode equation, (ZG3) terminal and source terminal to a level such as the source diode of the JFET transistor Then the gate-source diode current in the forward direction of the transistor is caused to lead which leads to the voltage drop across the impedance 20 25 30 35 12 will increase rapidly while the potential across the gate source (J3) is mainly limited to the built-in potential of the gate diode of the transistor will increase marginally and in the source diode. This limitation of the potential across the gate source diode causes a soft limitation of the output signal (9) (23) to occur. (ZG3) (24) of the JFET transistor wherein a soft distortion impedance connected to the gate terminal (J3) (24) is dimensioned for a small current into the gate terminal and is typically a few hundred thousand ohms.
    In another embodiment according to Figure 6, at least one (J2, J3) has a transistor. The MOSFET transistor comprises one to the gate terminal (29) (D1). In the case where the cathode of the diode (D1) is connected to the source terminal (28), an identical functionality is obtained as with a JFET transistor.
    (D1) of the JFET transistors replaced by at least one MOSFET arranged external diode In other embodiments, the cathode of the diode can be connected to some other electrical potential.
    In a further exemplary embodiment according to Fig. 7, at least (J2, J3) whose anode is connected to the gate terminal of (J2, J3). connected to an electric potential stone one of the JFET transistors is provided with an external diode (D2). said transistor. Furthermore, the cathode of said diode (VK), which potential (VK) is most advantageously lower than the potential of the source terminal of said transistor. This results in that the (D2) its built-in potential at a lower voltage on the gate-terminal external diode is brought to a potential that exceeds the current than the intrinsic diode in the JFET transistor needs to conduct current.
    (VK) most distribution line at a In an exemplary embodiment, the potential (D2) potential is adjusted which is equal to the difference between the choke (12) gate terminal and the source terminal at the operating point. Operating to a level which causes the diode in Figure 2 of the transistor and the potential between the voltage will then be in the middle of the interval between (12) the point (Q) of the choke voltage and the potential between the gate terminal 10 B and the source the terminal when the diode (D2) starts to conduct current. Such an setting means that hard and soft distortion occurs symmetrically in each half period of a sinusoidal input signal. to the level that causes the most audible sound formation.
    In another embodiment, the potential (VK) is adjusted. Figure 8 shows an embodiment of a modifying means (6) for forming an intermediate signal (7) from the sound former input (5). The modifier comprises two operas (OP1, OP2). to a first operational amplifier (+), via an impedance (33) The first operational amplifier's amplification amplifier The sound former input signal (5) is fed (OP1) further said sound generator input signal (5) (R3) (34) being constituted by the impedances (R1, R2) ( OP1) (OP2) (P1) (33) output non-inverting input connected to a potential from a voltage divider (VDD4). closed to the other operational amplifier and the voltage output is an- non- and a (34). center socket is connected to the first (OP1) applies a dc level to the sound-forming inverting input (+) (R4) of the potentiometer and via a potentiometer impedance to the inverting input (-) of said voltage divider (P1).
    The modifier (6) the signal (5) (33) output level (34), (P1). which is determined by the gain of the voltage divider is adjusted by means of the potentiometer. It should be emphasized in conclusion that the music system illustrated in Figure 1 is only an example of a possible and beneficial application of the shown method for driving a field effect transistor for sound formation.
    权利要求:
    Claims (8)
    [1]
    A method of driving a field effect transistor for forming an electrical input signal, representing a sound, into an output signal, said method comprising modifying the input signal to an intermediate signal, and outputting the intermediate signal to the field effect transistor for forming the output signal, characterized by the steps: - setting the operating point of the field power transistor so that it ends up in the square region of the transmission characteristics of the field power transistor by adjusting the potential between the gate terminal and the source terminal of the field power transistor by the DC voltage level of the intermediate signal and the electric potential of the field power transistor, adjusting the amplitude of the intermediate signal so that it causes the potential oscillation between the gate terminal and the source terminal to be at least in part in the quadratic region of the transmission characteristic of the field effect transistor.
    [2]
    A method according to claim 1, wherein the amplitude of the intermediate signal is adjusted to fall below the throttle voltage of the field effect transistor.
    [3]
    A method according to any one of claims 1 or 2, wherein the method comprises the steps of: - limiting the minimum electrical potential between the drain terminal and the source terminal of the field effect transistor by means of at least one impedance arranged at at least the drain terminal of the same, which impedance causes the maximum current that the field effect transistor can drive does not cause the transistor to bottom out, arranging a resistance in series between the output of the modifier and the gate terminal of the field effect transistor, - adjusting the amplitude of the intermediate signal so that this brings the potential between the gate terminal and the source terminal to a value that at least corresponds to the maximum possible drain current.
    [4]
    A method according to claim 3, wherein the method comprises the step of: - arranging a diode between the gate terminal of the field effect transistor and an electric potential.
    [5]
    Device for performing the method according to any one of claims 1 to 4, a sound, for forming an electrical signal representing comprising a field effect transistor and a ballast modifying means, which device is characterized in that the operating point of the field effect transistor is in the square area of the field characteristic of the field power transistor, the device further comprises means for controlling the potential between the gate terminal and the source terminal of the field power transistor by adding a DC voltage to which an intermediate signal is formed, the input signal which intermediate signal is output from the modifier to the field power transistor.
    [6]
    The device of claim 5, wherein the modifying means comprises means which causes the amplitude of the intermediate signal to fall below the threshold voltage of the field effect transistor.
    [7]
    Device according to any one of claims 5 or 6, wherein the device comprises: - at least one impedance arranged at at least the drain terminal of the field power transistor, which impedance causes a maximum drain current less than the maximum current of the bottomed field power transistor, 16 - a resistance in series between the output of the modifier and the gate terminal of the field effect transistor, means in the modifier for amplifying the amplitude of the intermediate signal to a value which causes at least the maximum drain current.
    [8]
    Device according to one of claims 5 or 6, wherein the device comprises: - a diode arranged between the gate terminal of the field effect transistor and an electric potential.
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    SE1051380A|SE535440C2|2010-12-28|2010-12-28|Method and apparatus for forming an electrical signal representing a sound|SE1051380A| SE535440C2|2010-12-28|2010-12-28|Method and apparatus for forming an electrical signal representing a sound|
    CA2821047A| CA2821047C|2010-12-28|2011-12-22|Method for forming an electric signal representing a sound and a device therefor|
    EP11854307.3A| EP2659586B1|2010-12-28|2011-12-22|Method for forming an electric signal representing a sound and a device therefor|
    CN201180063290.9A| CN103339854B|2010-12-28|2011-12-22|Method and its device for forming the electric signal for representing sound|
    US13/976,684| US8704585B2|2010-12-28|2011-12-22|Method for forming an electric signal representing a sound and a device therefor|
    PCT/SE2011/051576| WO2012091662A1|2010-12-28|2011-12-22|Method for forming an electric signal representing a sound and a device therefor|
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